Methods of selectively forming metal-doped chalcogenide materials, methods of selectively doping chalcogenide materials, and methods of forming semiconductor device structures including same

US8962460B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Jerome A. Imonigie · Boise, US
• Prashant Raghu · Boise, US
• Theodore M. Taylor · Boise, US
• Scott E. Sills · Boise, US

Key dates

• Filing date: Apr 26, 2011
• Grant date: Feb 24, 2015
• Expiry date: Jun 20, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

Methods of selectively forming a metal-doped chalcogenide material comprise exposing a chalcogenide material to a transition metal solution, and incorporating transition metal of the transition solution into the chalcogenide material without substantially incorporating the transition metal into an adjacent material. The chalcogenide material is not silver selenide. Another method comprises forming a chalcogenide material adjacent to and in contact with an insulative material, exposing the chalcogenide material and the insulative material to a transition metal solution, and diffusing transition metal of the transition metal solution into the chalcogenide material while substantially no transition metal diffuses into the insulative material. A method of doping a chalcogenide material of a memory cell with at least one transition metal without using an etch or chemical mechanical planarization process to remove the transition metal from an insulative material of the memory cell is also disclosed, wherein the chalcogenide material is not silver selenide.