Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8963212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2013 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Oct 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
In one general aspsect, a semiconductor device can include at least a first device region and a second device region disposed at a surface of a semiconductor region where the second device region is adjacent to the first device region and spaced apart from the first device region. That semiconductor device can include a connection region disposed between the first device region and the second device region, and a trench extending into the semiconductor region and at least extending from the first device region, through the connection region, and to the second device region. The semiconductor device can include a dielectric layer lining opposing sidewalls of the trench, an electrode disposed in the trench, and a conductive trace disposed over a portion of the trench in the connection region and electrically coupled to a portion of the electrode disposed in the connection region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.