NAND string containing self-aligned control gate sidewall cladding
US8969153B2 · kind B2 · utility
11Cited by
19References
8Claims
0Family size
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Key dates
| Filing date | Jul 1, 2013 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Jul 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A method of making a NAND string includes forming a tunnel dielectric over a semiconductor channel, forming a charge storage layer over the tunnel dielectric, forming a blocking dielectric over the charge storage layer, and forming a control gate layer over the blocking dielectric. The method also includes patterning the control gate layer to form a plurality of control gates separated by trenches, and reacting a first material with exposed sidewalls of the plurality of control gates to form self aligned metal-first material compound sidewall spacers on the exposed sidewalls of the plurality of control gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.