Donovan Lee
17Patents
7h-index
11Co-inventors
55Inventor score
Filing activity: Jan 9, 2008 → Apr 26, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8928061B2 | Three dimensional NAND device with silicide containing floating gates | Electricity | 63 | Active |
| US9252151B2 | Three dimensional NAND device with birds beak containing floating gates and method of making thereof | Electricity | 55 | Active |
| US9165940B2 | Three dimensional NAND device with silicide containing floating gates and method of making thereof | Electricity | 35 | Active |
| US8823075B2 | Select gate formation for nanodot flat cell | Electricity | 16 | Active |
| US7847999B2 | Interferometric modulator display devices | Electricity | 16 | Active |
| US8987087B2 | Three dimensional NAND device with birds beak containing floating gates and method of making thereof | Electricity | 14 | Active |
| US8969153B2 | NAND string containing self-aligned control gate sidewall cladding | Electricity | 11 | Active |
| US9331181B2 | Nanodot enhanced hybrid floating gate for non-volatile memory devices | Performing Operations; Transporting | 3 | Active |
| US8987802B2 | Method for using nanoparticles to make uniform discrete floating gate layer | Electricity | 3 | Active |
| US8741714B2 | Support lines to prevent line collapse in arrays | Electricity | 2 | Active |
| US9552991B2 | Trench vertical NAND and method of making thereof | Electricity | 2 | Active |
| US9543139B2 | In-situ support structure for line collapse robustness in memory arrays | Electricity | 2 | Active |
| US9349740B2 | Non-volatile storage element with suspended charge storage region | Electricity | 0 | Active |
| US9177808B2 | Memory device with control gate oxygen diffusion control and method of making thereof | Electricity | 0 | Active |
| US9230971B2 | NAND string containing self-aligned control gate sidewall cladding | Electricity | 0 | Active |
| US9548311B2 | Non-volatile storage element with suspended charge storage region | Electricity | 0 | Active |
| US9224746B2 | Inverted-T word line and formation for non-volatile storage | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.