DRAM MIM capacitor using non-noble electrodes

US8969169B1 · kind B1 · utility

Assignee

• INTERMOLECULAR, INC. · US

Inventors

• Hanhong Chen · Milpitas, US
• David Chi · Sunnyvale, US
• Imran Hashim · Saratoga, US
• Mitsuhiro Horikawa · Tokyo, JP
• Sandra G. Malhotra · San Jose, US

Key dates

• Filing date: Sep 20, 2013
• Grant date: Mar 3, 2015
• Expiry date: Sep 26, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/03

Abstract

A method for forming a capacitor stack includes forming a first bottom electrode layer including a conductive metal nitride material. A second bottom electrode layer is formed above the first bottom electrode layer. The second bottom electrode layer includes a conductive metal oxide material, wherein the crystal structure of the conductive metal oxide material promotes a desired high-k crystal phase of a subsequently deposited dielectric layer. A dielectric layer is formed above the second bottom electrode layer. Optionally, an oxygen-rich metal oxide layer is formed above the dielectric layer. Optionally, a third top electrode layer is formed above the oxygen-rich metal oxide layer. The third top electrode layer includes a conductive metal oxide material. A fourth top electrode layer is formed above the third top electrode layer. The fourth top electrode layer includes a conductive metal nitride material.