Methods of manufacturing semiconductor devices and a semiconductor structure

US8969195B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Felix P. Anderson · Colchester, US
• Steven P. Barkyoumb · South Burlington, US
• Edward C. Cooney, III · Jericho, US
• Thomas L. McDevitt · Underhill, US
• William J. Murphy · North Ferrisburgh, US
• David C. Strippe · Waterbury Center, US

Key dates

• Filing date: Feb 22, 2008
• Grant date: Mar 3, 2015
• Expiry date: Sep 14, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Processes for improving adhesion of films to semiconductor wafers and a semiconductor structure are provided. By implementing the processes of the invention, it is possible to significantly suppress defect creation, e.g., decrease particle generation, during wafer fabrication processes. More specifically, the processes described significantly reduce flaking of a TaN film from edges or extreme edges (bevel) of the wafer by effectively increasing the adhesion properties of the TaN film on the wafer. The method increasing a mol percent of nitride with respect to a total tantalum plus nitride to 25% or greater during a barrier layer fabrication process.