Efficient post write read in three dimensional nonvolatile memory
US8972675B2 · kind B2 · utility
9Cited by
28References
24Claims
0Family size
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Key dates
| Filing date | May 16, 2014 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | May 16, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5641
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Data that is stored in a higher error rate format in a 3-D nonvolatile memory is backed up in a lower error rate format. Later, the higher error rate copy is sampled to determine if it is acceptable. A sampling pattern samples all word lines of a string and at least one word line of each string of the block.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.