Synchronous embedded radio frequency pulsing for plasma etching
US8974684B2 · kind B2 · utility
12Cited by
0References
18Claims
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Key dates
| Filing date | Apr 27, 2012 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | May 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods for etching a substrate are provided herein. In some embodiments, a method of etching a substrate may include generating a plasma by providing only a first RF signal having a first frequency and a first duty cycle; applying only a second RF signal to bias the plasma towards the substrate, wherein the second RF signal has the first frequency and a second duty cycle different than the first duty cycle; adjusting a phase variance between the first and second RF signals to control an ion energy distribution in the plasma; and etching the substrate with the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.