Manufacturing method of silicon carbide semiconductor device
US8975139B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 4, 2012 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Sep 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.