MOS transistor and process thereof
US8975666B2 · kind B2 · utility
0Cited by
21References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2012 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Jan 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
A MOS transistor includes a gate structure on a substrate, and the gate structure includes a wetting layer, a transitional layer and a low resistivity material from bottom to top, wherein the transitional layer has the properties of a work function layer, and the gate structure does not have any work function layers. Moreover, the present invention provides a MOS transistor process forming said MOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.