Patent · US Active

Memory device with timing overlap mode

US8976610B2 · kind B2 · utility

4Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 9, 2013
Grant dateMar 10, 2015
Priority date
Expiry dateOct 9, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/4076
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In some examples, a memory device is configured to receive a precharge command and an activate command. The memory device performs a first series of events related to the precharge command in response to receiving the precharge command and a second series of events related to the activate command in response to receiving the activate command. The memory device delays the start of the second series of events until the first series of events completes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.