Inventor · Austin, TX, US

Halbert S. Lin

19Patents

5h-index

9Co-inventors

55Inventor score

Filing activity: Jun 28, 2002 → Dec 6, 2016

Most-cited inventions

Patent	Title	Area	Cited by	Status
US6657889B1	Memory having write current ramp rate control	Physics	23	Expired
US6711068B2	Balanced load memory and method of operation	Physics	20	Expired
US9047969B2	Method of writing to a spin torque magnetic random access memory	Physics	10	Active
US8811071B2	Method of writing to a spin torque magnetic random access memory	Physics	9	Active
US9311980B1	Word line supply voltage generator for a memory device and method therefore	Physics	8	Active
US6842365B1	Write driver for a magnetoresistive memory	Physics	5	Expired
US8976610B2	Memory device with timing overlap mode	Physics	4	Active
US9007811B1	Word line driver circuit	Physics	3	Active
US9245611B2	Method of writing to a spin torque magnetic random access memory	Physics	3	Active
US9135970B2	Tamper detection and response in a memory device	Physics	3	Active
US9552849B2	Memory device with timing overlap mode and precharge timing circuit	Physics	2	Active
US9230633B2	Memory device with timing overlap mode	Physics	2	Active
US9569640B2	Tamper detection and response in a memory device	Physics	1	Active
US9230632B1	Word line driver circuit	Physics	1	Active
US9361964B1	Boosted supply voltage generator for a memory device and method therefore	Physics	1	Active
US9378798B2	Method of writing to a spin torque magnetic random access memory	Physics	1	Active
US9870812B2	Memory system with timing overlap mode for activate and precharge operations	Physics	0	Active
US9583169B2	Boosted supply voltage generator and method therefore	Physics	0	Active
US9502093B2	Method of writing to a spin torque magnetic random access memory	Physics	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.