Sidewall image transfer method for low aspect ratio patterns
US8980111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | May 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for patterning a substrate is described. The patterning method may include conformally depositing a material layer over a pattern according to a conformal deposition process, selectively depositing a second material layer on an exposed surface of the material layer according to a selected deposition process recipe; partially removing the material layer using a plasma etching process to expose a top surface of the pattern, open a portion of the material layer at a bottom region between adjacent features of the pattern, and retain a remaining portion of the material layer on sidewalls of the pattern; and removing the pattern using one or more etching processes to leave a final pattern comprising the remaining portion of the material layer and the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.