Method for chemical mechanical polishing silicon wafers
US8980749B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 24, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Oct 24, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/24
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for polishing a silicon wafer is provided, comprising: providing a silicon wafer; providing a polishing pad having a polishing layer which is the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.4 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 μm/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the silicon wafer; and, creating dynamic contact between the polishing surface and the silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.