Method of forming a plurality of spaced features
US8980752B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jul 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a plurality of spaced features includes forming sacrificial hardmask material over underlying material. The sacrificial hardmask material has at least two layers of different composition. Portions of the sacrificial hardmask material are removed to form a mask over the underlying material. Individual features of the mask have at least two layers of different composition, with one of the layers of each of the individual features having a tensile intrinsic stress of at least 400.0 MPa. The individual features have a total tensile intrinsic stress greater than 0.0 MPa. The mask is used while etching into the underlying material to form a plurality of spaced features comprising the underlying material. Other implementations are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.