Metal gate transistor and method for fabricating the same
US8980753B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2010 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jun 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/017
Abstract
A method for fabricating a metal gate transistor is disclosed. The method includes the steps of: providing a substrate having a first transistor region and a second transistor region; forming a first metal-oxide semiconductor (MOS) transistor on the first transistor region and a second MOS transistor on the second transistor region, in which the first MOS transistor includes a first dummy gate and the second MOS transistor comprises a second dummy gate; forming a patterned hard mask on the second MOS transistor, in which the hard mask includes at least one metal atom; and using the patterned hard mask to remove the first dummy gate of the first MOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.