Method of removing a photoresist from a low-k dielectric film
US8980754B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2011 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Dec 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of removing photoresists from low-k dielectric films are described. For example, a method includes forming and patterning a photoresist layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Trenches are formed in the exposed portions of the low-k dielectric layer. A plurality of process cycles is performed to remove the photoresist layer. Each process cycle includes forming a silicon source layer on surfaces of the trenches of the low-k dielectric layer, and exposing the photoresist layer to an oxygen source to form an Si—O-containing layer on the surfaces of the trenches of the low-k dielectric layer and to remove at least a portion of the photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.