Methods for fabricating memory cells having fin structures with semicircular top surfaces and rounded top corners and edges

US8987092B2 · kind B2 · utility

Assignee

• Spansion LLC. · US

Inventors

• Inkuk Kang · San Jose, US
• Gang Xue · Beijing, CN
• Shenqing Fang · Fremont, US
• Rinji Sugino · San Jose, US
• Yi Ma · Orlando, US

Key dates

• Filing date: Apr 28, 2008
• Grant date: Mar 24, 2015
• Expiry date: Jun 22, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6213

Abstract

Methods for fabricating a FIN structure with a semicircular top surface and rounded top surface corners and edges are disclosed. As a part of a disclosed method, a FIN structure is formed in a semiconductor substrate. The FIN structure includes a top surface having corners and edges. The FIN structure is annealed where the annealing causes the top surface to have a semicircular shape and the top surface corners and edges to be rounded.