Integrated circuit and method for fabricating the same having a replacement gate structure
US8987126B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2012 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | May 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
Integrated circuits and methods of fabricating integrated circuits are provided herein. In an embodiment, a method of fabricating an integrated circuit includes depositing a layer of a high-k dielectric material; depositing a layer of a work function shifter material over a portion of the high-k dielectric material to form an overlapping region; heat treating the layer of the high-k dielectric material and the layer of the work function shifter material to as to form a transformed dielectric material via thermal diffusion that is a combination of the high-k dielectric and work function shifter materials in the overlapping region; and depositing a layer of a first replacement gate fill material to obtain multiple threshold voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.