Patent · US Active

Ion implanter and ion implant method thereof

US8987691B2 · kind B2 · utility

0Cited by

11References

27Claims

0Family size

Assignee

Advanced Ion Beam Technology, Inc. · TW

Inventors

Zhimin Wan · Chandler, US
John D. Pollock · Rowley, US
Don Berrian · Topsfield, US

Key dates

Filing date	Jan 21, 2013
Grant date	Mar 24, 2015
Priority date	—
Expiry date	Jan 21, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/30488
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

An ion implanter and an ion implant method are disclosed. Essentially, the wafer is moved along one direction and an aperture mechanism having an aperture is moved along another direction, so that the projected area of an ion beam filtered by the aperture is two-dimensionally scanned over the wafer. Thus, the required hardware and/or operation to move the wafer may be simplified. Further, when a ribbon ion beam is provided, the shape/size of the aperture may be similar to the size/shape of a traditional spot beam, so that a traditional two-dimensional scan may be achieved. Optionally, the ion beam path may be fixed without scanning the ion beam when the ion beam is to be implanted into the wafer, also the area of the aperture may be adjustable during a period of moving the aperture across the ion beam.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.