Microelectronic device with isolation trenches extending under an active area
US8987854B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2013 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Sep 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/451
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device is provided, including: a substrate including a first semiconductor layer positioned on a dielectric layer and a second semiconductor layer; and an isolation trench disposed through the first semiconductor layer, the dielectric layer, and a part of the thickness of the second semiconductor layer, including a dielectric material and delimiting, in the first semiconductor layer, a roughly rectangular active area of the device, wherein in said part of the thickness of the second semiconductor layer, at least one portion of the dielectric material is positioned under the active area delimited by at least four side walls of the trench, and two of the at least four side walls are roughly parallel with one another and are positioned under the active area, and the other two of the at least four side walls are orthogonal to said two walls and are not positioned under the active area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.