Apparatus to control semiconductor film deposition characteristics
US8991332B2 · kind B2 · utility
0Cited by
34References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2009 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Jul 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.