Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target
US8992741B2 · kind B2 · utility
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Key dates
| Filing date | Aug 8, 2008 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Mar 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a plasma-enhanced physical vapor deposition reactor, uniformity of radial distribution of the deposition rate across the workpiece is enhanced by applying both RF and D.C. power to the target and adjusting the power levels of the RF and D.C. power independently. Further optimization is obtained by adjusting the height of the magnet above the target, adjusting the radius of the orbital motion of the magnet above the target and providing an angle edge surface of the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.