III-N material grown on ErAIN buffer on Si substrate
US8994032B2 · kind B2 · utility
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Key dates
| Filing date | Mar 4, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Mar 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/471
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
III-N material grown on a buffer on a silicon substrate includes a single crystal electrically insulating buffer positioned on a silicon substrate. The single crystal buffer includes rare earth aluminum nitride substantially crystal lattice matched to the surface of the silicon substrate, i.e. a lattice co-incidence between REAlN and Si better than a 5:4 ratio. A layer of single crystal III-N material is positioned on the surface of the buffer and substantially crystal lattice matched to the surface of the buffer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.