ESD/antenna diodes for through-silicon vias
US8999766B2 · kind B2 · utility
1Cited by
18References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2013 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Dec 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Roughly described, an antenna diode is formed at least partially within the exclusion zone around a TSV, and is connected to the TSV by way of a metal 1 layer conductor at the same time that the TSV is connected to either the gate poly or a diffusion region of one or more transistors placed outside the exclusion zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.