Semiconductor device and manufacturing method thereof
US9000586B2 · kind B2 · utility
40Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2012 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Dec 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.