Safeguarding data through an SMT process
US9007808B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2012 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Oct 15, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0083
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Structures and methods for recovering data in a semiconductor memory device are disclosed herein. In one embodiment, a method of recovering data in a semiconductor memory device, can include: (i) pre-conditioning a first memory cell on the semiconductor memory device by using a formation voltage to program a first data state in the first memory cell; (ii) storing a second data state in a second memory cell on the semiconductor memory device by maintaining the second memory cell in a virgin state; (iii) mounting the semiconductor memory device on a printed-circuit board (PCB) by using a high temperature process that increases a resistance of the first memory cell; and (iv) performing a recovery of the first data state by reducing the resistance of the first memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.