Write operations for defect management in nonvolatile memory
US9009398B2 · kind B2 · utility
4Cited by
31References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 2014 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | May 19, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5641
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Data that is stored in a higher error rate format in a nonvolatile memory is backed up in a lower error rate format. Data to be stored may be transferred once to on-chip data latches where it is maintained while it is programmed in both the high error rate format and the low error rate format without being resent to the nonvolatile memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.