Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structure

US9012980B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Hans Weber · Villach, AT
• Werner Schustereder · Villach, AT
• Wolfgang Jantscher · Villach, AT
• Helmut Strack · Hersbruck, DE

Key dates

• Filing date: Dec 4, 2013
• Grant date: Apr 21, 2015
• Expiry date: Dec 4, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of manufacturing a semiconductor device includes forming a charge compensation device structure in a semiconductor substrate. The method further includes measuring a value of an electric characteristic related to the charge compensation device. At least one of proton irradiation and annealing parameters are adjusted based on the measured value. Based on the at least one of the adjusted proton irradiation and annealing parameters the semiconductor substrate is irradiated with protons, and thereafter, the semiconductor substrate is annealed.