Semiconductor device with an inclined source/drain and associated methods
US9012999B2 · kind B2 · utility
10Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2012 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Dec 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having a channel region therein, a gate structure above the channel region, and source and drain regions on opposite sides of the gate structure. A respective contact is on each of the source and drain regions. At least one of the source and drain regions has an inclined upper contact surface with the respective contact. The inclined upper contact surface has at least a 50% greater area than would a corresponding flat contact surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.