CMP pad with local area transparency
US9017140B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2010 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Sep 1, 2032 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/205
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A CMP polishing pad comprising (a) a polishing layer having a polishing surface and a back surface opposite said polishing surface; said polishing layer having at least one cured opaque thermoset polyurethane region and at least one aperture region; said at least one cured opaque thermoset region has a porosity from about 10% to about 55% by volume; said at least one aperture region having (1) a top opening positioned below the polishing surface, (2) a bottom opening that is co-planar with said back surface and (3) straight line vertical sidewalls extending from said aperture top opening to said aperture bottom opening; said at least one aperture region filled with a cured plug of thermoset polyurethane local area transparency material that has a light transmission of less than 80% at a wavelength from 700 to 710 nanometers and is chemically bonded directly to a thermoset polyurethane opaque area;
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.