Ultrathin body fully depleted silicon-on-insulator integrated circuits and methods for fabricating same

US9023713B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ralf Illgen · Dresden, DE
• Stefan Flachowsky · Dresden, DE

Key dates

• Filing date: Jun 22, 2012
• Grant date: May 5, 2015
• Expiry date: Mar 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/68
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing an ultrathin body (UTB) fully depleted silicon-on-insulator (FDSOI) substrate. A PFET temporary gate structure and an NFET temporary gate structure are formed on the substrate. The method implants ions to form lightly doped active areas around the gate structures. A diffusionless annealing process is performed on the active areas. Further, a compressive strain region is formed around the PFET gate structure and a tensile strain region is formed around the NFET gate structure.