Semiconductor device and manufacturing method thereof
US9024330B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Dec 26, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Dec 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming a Schottky electrode in a second area on the one of the main surfaces of the silicon carbide layer with self alignment. The second area is exposed where the ohmic electrode is not formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.