Wafer level phosphor coating method and devices fabricated utilizing method
US9024349B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2007 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Jan 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8515
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.