Field effect transistor devices with low source resistance

US9029945B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Sei-Hyung Ryu · Cary, US
• Doyle Craig Capell · Hillsborough, US
• Lin Cheng · Chapel Hill, US
• Sarit Dhar · Cary, US
• Charlotte Jonas · Morrisville, US
• Anant Agarwal · San Jose, US
• John Williams Palmour · Raleigh, US

Key dates

• Filing date: May 6, 2011
• Grant date: May 12, 2015
• Expiry date: May 6, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region. The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.