Semiconductor device, junction field effect transistor and vertical field effect transistor

US9029974B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Romain Esteve · Munich, DE
• Jens Peter Konrath · Villach, AT
• Daniel Kueck · Villach, AT
• David Laforet · Villach, AT
• Cedric Ouvrard · Villach, AT
• Roland Rupp · Achern, DE
• Andreas Voerckel · Finkenstein, AT
• Wolfgang Werner · Hersbruck, DE

Key dates

• Filing date: Sep 11, 2013
• Grant date: May 12, 2015
• Expiry date: Sep 11, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A semiconductor device according to an embodiment is at least partially arranged in or on a substrate and includes a recess forming a mesa, wherein the mesa extends along a direction into the substrate to a bottom plane of the recess and includes a semiconducting material of a first conductivity type, the semiconducting material of the mesa including at least locally a first doping concentration not extending further into the substrate than the bottom plane. The semiconductor device further includes an electrically conductive structure arranged at least partially along a sidewall of the mesa, the electrically conductive structure forming a Schottky or Schottky-like electrical contact with the semiconducting material of the mesa, wherein the substrate comprises the semiconducting material of the first conductivity type comprising at least locally a second doping concentration different from the first doping concentration along a projection of the mesa into the substrate.