Method for manufacturing semiconductor substrate
US9034721B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 31, 2014 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Jul 31, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N−-type layer formed on an N+-type substrate. This trench is used to leave voids after the formation of a P−-type epitaxial film on the N−-type layer. Then, the voids formed in the N−-type layer can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.