Semiconductor die singulation method
US9034733B2 · kind B2 · utility
4Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2014 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Jan 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/5446
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and separating portions of the backmetal layer within the singulation lines using a pressurized fluid applied to the carrier tape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.