Methods of forming tensile tungsten films and compressive tungsten films
US9034760B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2013 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Jul 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods, apparatus, and systems for depositing tensile or compressive tungsten films are described. In one aspect, a method includes providing a substrate to a chamber. The substrate has a field region and a feature recessed from the field region. Then, the substrate is exposed to an organometallic tungsten precursor. The organometallic tungsten precursor not adsorbed onto the substrate is removed from the chamber. The substrate is treated with a first treatment including a heat treatment or a plasma treatment to form a tungsten layer on the substrate. After treating the substrate, residual gasses are removed from the chamber. The tungsten layer on the substrate is treated with a second treatment including a heat treatment or a plasma treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.