Method and system for critical dimension uniformity using charged particle beam lithography
US9038003B2 · kind B2 · utility
10Cited by
23References
29Claims
0Family size
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Key dates
| Filing date | Apr 15, 2013 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Apr 15, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for mask data preparation or mask process correction is disclosed in which a set of charged particle beam shots is determined which is capable of forming a pattern on a surface, wherein critical dimension uniformity (CDU) of the pattern is optimized. In some embodiments the CDU is optimized by varying at least two factors. In other embodiments, model-based techniques are used. In yet other embodiments, the surface is a reticle to be used in an optical lithographic process to form a pattern on a wafer, and CDU on the wafer is optimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.