Integrated circuits having laterally confined epitaxial material overlying fin structures and methods for fabricating same

US9040380B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Xiang Hu · Shanghai, CN
• Jin Ping Liu · Ballston Lake, US
• Jill C. Hildreth · Slingerlands, US
• Taejoon Han · Pleasanton, US

Key dates

• Filing date: Sep 11, 2013
• Grant date: May 26, 2015
• Expiry date: Sep 11, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/011

Abstract

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a fin structure overlying a semiconductor substrate. The fin structure defines a fin axis extending in a longitudinal direction perpendicular to a lateral direction and has two fin sidewalls parallel to the fin axis. The method includes forming gate structures overlying the fin structure and transverse to the fin axis. Further, the method includes growing an epitaxial material on the fin structure and confining growth of the epitaxial material in the lateral direction.