Advanced low k cap film formation process for nano electronic devices
US9040411B2 · kind B2 · utility
4Cited by
6References
19Claims
0Family size
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Key dates
| Filing date | Feb 28, 2014 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Feb 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.