Relaxation and transfer of strained material layers
US9041165B2 · kind B2 · utility
0Cited by
8References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 11, 2010 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Jan 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the formation of an at least partially relaxed strained material layer, comprises providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the patterned seed substrate to an intermediate substrate; and at least partially relaxing the strained material layer by a heat treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.