Method of writing to a spin torque magnetic random access memory
US9047969B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2014 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Aug 5, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0411
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.