Method of obtaining patters in an antireflective layer
US9048011B2 · kind B2 · utility
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1References
15Claims
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Key dates
| Filing date | Dec 27, 2013 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Dec 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to the field of production in thin coatings of electronic devices and/or MEMS and relates to an improved method for forming a pattern in a thin SiARC anti-reflective coating, comprising the doping by deposition of such SiARC coating covered with a resist pattern through a protective coating of the resist pattern, then etching the doped zones of the SiARC coating (FIG. 3c).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.