Semiconductor device and manufacturing method thereof
US9048125B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2013 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Apr 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.