NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors
US9048183B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2014 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Jan 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.