Die seal ring and method of forming the same
US9048246B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2013 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Oct 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A die seal ring is provided. The die seal ring includes a substrate and a first layer extruding from the substrate. The first layer has a first fin ring structure and a layout of the first fin ring structure has a stamp-like shape. In addition, a method for forming a die seal ring is provided. A substrate having an active region is provided. A patterned sacrificial layer is formed on the substrate. A spacer is formed on the sidewall of the patterned sacrificial layer. The patterned sacrificial layer is removed. The substrate is patterned by using the spacer as a mask, thereby simultaneously forming at least a fin structure of a Fin-FET and a first layer of the die seal ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.