Method for isotropic etching
US9054045B2 · kind B2 · utility
4Cited by
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18Claims
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Key dates
| Filing date | Dec 27, 2013 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Dec 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, the invention relates to a method for the anisotropic etching of patterns in at least one layer to be etched through a hard mask comprising carbon in an inductive-coupling plasma etching reactor (ICP), the method being characterized in that the hard mask is made from boron doped with carbon (B:C), and in that, prior to the anisotropic etching of the patterns in said layer to be etched through the hard mask of carbon-doped boron (B:C), the following steps are performed:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.