Methods for integration of pore stuffing material

US9054052B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Nicholas V. LiCausi · Watervliet, US
• Errol Todd Ryan · Wappingers Falls, US
• Ming He · San Jose, US
• Moosung Chae · Poughkeepsie, US
• Kunaljeet Tanwar · Slingerlands, US
• Larry Zhao · Niskayuna, US
• Christian Witt · Overijse, BE
• Ailian Zhao · Austin, US
• Sean Xuan Lin · Hopkins, US
• Xunyuan Zhang · Albany, US

Key dates

• Filing date: May 28, 2013
• Grant date: Jun 9, 2015
• Expiry date: Jul 31, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2221/1047
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process is provided for methods of reducing damage to an ultra-low k layer during fabrication. In one aspect, a method includes: providing a cured ultra-low k film containing pores filled with a pore-stuffing material; and modifying an exposed surface of the ultra-low k film to provide a modified layer in the ultra-low k film. In another aspect, a semiconductor device comprising a modified layer on a surface of an ultra-low k film is provided.